Hangzhou Haiqian Semiconductor Co., Ltd. is a high-tech enterprise focusing on the R&D, production and sales of the third-generation semiconductor silicon carbide epitaxial wafers.
Haiqian has a senior technical team in the industry, most of the team members have more than 12 years of experience in the semiconductor industry, based on years of technical precipitation and rich experience in the industry. The team has mastered the world wide leading silicon carbide epitaxial wafer mass production technology. Haiqian adheres to the "quality shapes the future" for the purpose and strives to contribute to the development of the third generation semiconductor industry.
Haiqian adheres to the business philosophy focusing on technology-centered, quality-based and customer satisfaction-oriented. Haiqian provides customers with high-quality product supply and value-added services and provides employees a broad space for self-development. We create wealth for the industry with the fruits of our labor.
650-3300V grade silicon carbide epitaxial wafers for SBD (Schottky diode) device...
650~3300V silicon carbide epitaxial chips for manufacturing MOSFET (metal oxide ...
N doped (n-type) or Al doped (p-type) epitaxial wafers, and customize single-lay...
30-200um thick film epitaxial wafers to meet the needs of various types of devic...
LEAN QUALITY
The chip defect scanning and detection equipment of Haiqian Semiconductor has adopted dual laser scanning technology, which not only accurately detects the morphology defects on the crystal surface, but also accurately scans and detects the lattice defects inside the material.
More >>The production processes of Haiqian semiconductor epitaxial wafers are independently developed, achieving high yield while being independently controllable, without any issues of being stuck.
More >>In addition to conventional measurement and control methods, Haiqian Semiconductor has added special control methods to ensure that silicon carbide epitaxial wafers will not fail due to abnormal epitaxial material quality. This technology is an original creation of Haiqian Technology Team.
More >>After a series of process optimizations and equipment upgrades, the Haiqian Semiconductor Technology Team has achieved an epitaxial layer thickness non-uniformity of less than 0.5% for silicon carbide epitaxial wafers and a carrier concentration non-uniformity of less than 1.5% for epitaxial layers.
More >>The Haiqian Semiconductor Technology Team relies on years of epitaxial process experience and current technological development to continuously optimize and iterate its own silicon carbide epitaxial technology. At the same time, it develops substrates from different manufacturers, and epitaxial growth on substrates from different manufacturers can achieve low defect density, providing strong guarantee for device reliability.
More >>From June 29 to July 1, 2023, SEMICON China 2023 was held at Shanghai New I···
SiC epitaxial wafer is the core link of SiC industrial chain. Epitaxy technique ···
Three series of standards, T/CASAS 025-202X "8-inch Silicon Carbide Wafer R···