The chip defect scanning and detection equipment of Haiqian Semiconductor has adopted dual laser scanning technology, which not only accurately detects the morphology defects on the crystal surface, but also accurately scans and detects the lattice defects inside the material.

The production processes of Haiqian semiconductor epitaxial wafers are independently developed, achieving high yield while being independently controllable, without any issues of being stuck.

In addition to conventional measurement and control methods, Haiqian Semiconductor has added special control methods to ensure that silicon carbide epitaxial wafers will not fail due to abnormal epitaxial material quality. This technology is an original creation of Haiqian Technology Team.

After a series of process optimizations and equipment upgrades, the Haiqian Semiconductor Technology Team has achieved an epitaxial layer thickness non-uniformity of less than 0.5% for silicon carbide epitaxial wafers and a carrier concentration non-uniformity of less than 1.5% for epitaxial layers.

The Haiqian Semiconductor Technology Team relies on years of epitaxial process experience and current technological development to continuously optimize and iterate its own silicon carbide epitaxial technology. At the same time, it develops substrates from different manufacturers, and epitaxial growth on substrates from different manufacturers can achieve low defect density, providing strong guarantee for device reliability.