Hangzhou Haigan Semiconductor Co., Ltd
Cn

Products and Services

Bipolar device-grade silicon carbide epitaxial wafer
产品特点
    N-doped (n-type) or Al-doped (p-type) epitaxial wafers, customized according to customer needs, can be single-layer or multi-layer with different doping types, meeting the requirements of bipolar power devices such as IGBTs, GTOs, and BJTs.
Consult us >
  • Technical Specifications