Relying on years of epitaxial process experience and current technology development, the Haigan Semiconductor Technology team continuously optimizes and iterates its own silicon carbide epitaxial technology. At the same time, it develops substrates for different manufacturers, achieving low defect density in epitaxial growth on substrates from various manufacturers, providing strong guarantees for device reliability.
After a series of process optimizations and equipment upgrades, the Haigan Semiconductor Technology team has achieved a thickness uniformity of less than 0.5% for the epitaxial layer of silicon carbide epitaxial wafers, and a carrier concentration uniformity of less than 1.5% for the epitaxial layer.
In addition to conventional measurement and control methods, Haiqian Semiconductor has added special control methods to ensure that silicon carbide epitaxial wafers do not cause device failure due to abnormal quality of the epitaxial material. This technology is original to Haiqian's technical team.
All process flows in the production of semiconductor epitaxial wafers at Haigan are independently developed, achieving high yield while being controllable and free from potential bottlenecks.
The wafer defect scanning and detection equipment from Haiqian Semiconductor has adopted dual-laser scanning technology. In addition to accurately detecting morphological defects on the crystal surface, it can also precisely scan and detect lattice defects within the material.
