The three series of standards, including T/CASAS 025—202X "8-inch Silicon Carbide Wafer Benchmark Marks and Dimensions", jointly drafted by Shandong University, Guangzhou Nansha Wafer Semiconductor Technology Co., Ltd., Hantian Tiancheng Electronic Technology (Xiamen) Co., Ltd., Guangdong Tianyu Semiconductor Co., Ltd., Shaoxing Semiconductor Manufacturing Co., Ltd., Techwin Semiconductor Technology (Beijing) Co., Ltd., Hangzhou Haigan Semiconductor Co., Ltd., Anhui Changfei Advanced Semiconductor Co., Ltd., and China Electronics Compound Semiconductor Co., Ltd., have completed the preparation of the exposure draft.

T/CASAS 025—202X "8-Inch Silicon Carbide Wafer Reference Marks and Dimensions" specifies the reference marks and dimensions for 8-inch silicon carbide wafers, applicable to silicon carbide cutting, grinding, and polishing wafers.

T/CASAS 026—202X "Measurement of Minority Carrier Lifetime in Silicon Carbide by Microwave Photoconductance Method" specifies the method for measuring the minority carrier lifetime in silicon carbide using the microwave photoconductance method. It is applicable to 4-12 inch silicon carbide substrate wafers, silicon carbide epitaxial wafers, and silicon carbide wafers with a minority carrier lifetime ranging from 20 ns to 200 μs.

T/CASAS 032—202X "Determination of Metal Element Content on the Surface of Silicon Carbide Wafers by Inductively Coupled Plasma Mass Spectrometry" specifies the method for determining the metal element content on the surface of silicon carbide wafers using inductively coupled plasma mass spectrometry. It is applicable to the determination of trace metal elements such as sodium, aluminum, potassium, calcium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, silver, tungsten, gold, and mercury on the surfaces of silicon carbide single crystal polished wafers and silicon carbide epitaxial wafers, with a measurement range of 108 cm-2 to 1012 cm-2. This document is applicable to silicon carbide wafers ranging from 4 to 8 inches in size, and even larger ones. It is also suitable for the determination of trace metal element content on the surfaces of non-patterned silicon carbide wafers such as silicon carbide annealed wafers.