RF devices are components responsible for signal conversion in the field of wireless communication, such as power amplifiers, RF switches, filters, low-noise amplifiers, etc. Silicon carbide-based gallium nitride RF devices have advantages such as high thermal conductivity, high frequency, and high power. Compared to traditional silicon-based LDMOS devices, they can better meet the requirements of low energy consumption and high efficiency in fields such as 5G communication base stations and radar applications.